False-color scanning electron micrograph of the ellipse-shaped S/F/S junction device A. The Co weak link is formed by the indicated trench that separates the two Nb electrodes. The scale bar corresponds to 500 nm. The simulated bistable spin textures at zero field. The cobalt either is magnetized along the long axis of the device or hosts two stable vortices . Orange circles highlight the vortex cores, and the orange line indicates the trench location.
The color scale indicates the out-of-plane magnetization of the top of the cobalt layer.Basic transport characteristics of device A. In we show the resistance-vs-temperature curves for both the M state and the V state, measured using 20in the M state. The inset shows the low-temperature behavior. depicts threecharacteristics of the sample in the V state, acquired under different rf radiation powers. The frequency is 1.6 GHz, and the temperature is 1.6 K.
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