Human brain-inspired computer memory design set to increase energy efficiency and performance

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University of Cambridge researcher's innovative 'resistive switching memory' has the potential to reshape the landscape of computing.

He pointed out the energy and time wasted in shuttling data back and forth between separate memory and processing units. This traditional setup has fueled the explosive growth in energy demands, hindering our efforts to reduce carbon emissions

These novel structures, known as vertical barium-rich "bridges," allowed electrons to pass through while the surrounding hafnium oxide remained unstructured. At the points where these bridges met the device contacts, an adjustable energy barrier was created. This barrier influenced the electrical resistance of the composite material and enabled multiple states to exist within it.

Dr. Hellenbrand expressed his excitement, stating that these materials could store and process information in the same place, just like our brains do. This feature makes them incredibly promising for the rapidly growing fields of artificial intelligence and machine learning.

 

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