Capacitively and Inductively Coupled Excitons in Bilayer ${\mathrm{MoS}}_{2}$

The coupling of intralayer A and B excitons and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer. It is shown that the measured optical susceptibility reveals both the magnitude and the phase of the coupling constants. The IE and B excitons couple via a 0-phase coupling; the IE and A excitons couple via a-phase coupling.

The IE-B and IE-A coupling mechanisms are interpreted as hole tunneling and electron-hole exchange, respectively. The couplings imply that even in a monolayer, the A and B excitons have mixed spin states. Using the IE as a sensor, the A-B intravalley exchange coupling is determined. Finally, we realize a bright and highly tunable lowest-energy momentum-direct exciton at high electric fields.

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